The ZEISS Crossbeam 750 focused ion beam-scanning electron microscope (FIB-SEM) is optimized for demanding sample preparation. It provides a live, high-resolution “see while you mill” view at any imaging and milling condition to enable immediate feedback and eliminate milling interruptions for uniform first-pass transmission electron microscopy (TEM) lamellae and precise FIB cross sections.
For advanced semiconductor and materials workflows, ZEISS Crossbeam 750 FIB-SEM with new Gemini 4 electron optics delivers background-free, real-time endpointing and sub-nanometer precision for TEM lamellae and high-fidelity three-dimensional (3D) analysis. It is ideal for analysis of leading-node logic and memory devices as well as nanofabrication and 3D volume imaging. For materials research and life sciences, ZEISS Crossbeam 750 speeds acquisition times for 3D tomography through a larger field of view with reduced distortion.
As semiconductor device architectures shrink and complexity increases—from fin field-effect transistor (finFET) to gate-all-around (GAA), complementary field-effect transistor (CFET) and emerging two-dimensional (2D) materials—precise, real-time control during FIB processing has become critical. ZEISS Crossbeam 750 directly addresses this need by maintaining a clear, high-resolution SEM view during milling, even at low landing energies and at tilt.
The system enables users to observe FIB-sample interactions in real time, fine-tune thinning and polishing steps as they occur, and to hit nanometer-scale endpoints on the first attempt—achieving consistent lamella quality for leading-node logic and memory device and backside power delivery network workflows.
ZEISS Crossbeam 750 FIB-SEM is essential in materials science workflows for uniform TEM lamella preparation, atom probe tomography (APT) sample preparation, nanofabrication (including electron-beam lithography) and high-fidelity 3D volume imaging. For life sciences and materials research, the undistorted large field of view of ZEISS Crossbeam 750 and its stable low-kV performance improve signal-to-noise ratio and speed acquisition time.