A focused ion beam microscope (FIB-SEM) uses a focused beam of ions for imaging and milling of samples. The ion beam hitting the surface causes some of the material from the top layer of the sample to come off and scatter, a process called sputtering. When the ion beam is a low current beam, the amount of sputtering is low and signals from the sputtered material are gathered to form information about what the surface looks like. If, on the other hand, the ion beams are high current beams, there will be a good deal of sputtering and so this can be used to etch the surface. The FIB-SEM is used in the semiconductor industry, biological sciences, and materials science. Gallium ions are most often used for the ion beam, but sometimes helium ions are used instead. The helium ions are much smaller, so they result in less sputtering while still enabling a high resolution image.
Considerations for purchasing a FIB-SEM system
When comparing focused ion beam microscopes, things to consider are its ion source, resolution, and magnification levels.
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JEOL USA, Inc.
- Writing Position Accuracy: ≤ ± 10 nm
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JEOL USA, Inc.
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- Max 125 MHz
JEOL USA, Inc.
- 1000 µm
- Stage Positioning Resolution: 0.15 nm
- Max. 200 MHz
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