A focused ion beam microscope (FIB-SEM) uses a focused beam of ions for imaging and milling of samples. The ion beam hitting the surface causes some of the material from the top layer of the sample to come off and scatter, a process called sputtering. When the ion beam is a low current beam, the amount of sputtering is low and signals from the sputtered material are gathered to form information about what the surface looks like. If, on the other hand, the ion beams are high current beams, there will be a good deal of sputtering and so this can be used to etch the surface. The FIB-SEM is used in the semiconductor industry, biological sciences, and materials science. Gallium ions are most often used for the ion beam, but sometimes helium ions are used instead. The helium ions are much smaller, so they result in less sputtering while still enabling a high resolution image.
Considerations for purchasing a FIB-SEM system
When comparing focused ion beam microscopes, things to consider are its ion source, resolution, and magnification levels.
Click on the links below to discover and compare FIB-SEM systems from various manufacturers:
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| Company | JEOL USA, Inc. | JEOL USA, Inc. | JEOL USA, Inc. |
| Item | JBX-A9 Electron Beam Lithography System | JBX-3050 Focused Ion Beam Microscope | JBX-8100FS |
| Catalog Number | JBX-A9 | JBX-3050 | JBX-8100FS |
| Price | | | |
| Sensitivity | 1000 µm | Writing Position Accuracy: ≤ ± 10 nm | Inquire |
| Resolution | Stage Positioning Resolution: 0.15 nm | Inquire | Inquire |
| Scanning Speed | Max. 200 MHz | Inquire | Max 125 MHz |
| Description | JBX-A9 Series Features
- High Precision and High Throughput Direct Writing System
- Built with JEOL’s renowned Electron Optics for ultimate stability
- Loadable wafer up to 300 mm
- FOUP system optionally available
- In-line extendibility to other process tools such as coaters and developers
- Low power
JBX-A9 Series Features
- High Precision and High Throughput Direct Writing System
- Built with JEOL’s renowned Electron Optics for ultimate stability
- Loadable wafer up to 300 mm
- FOUP system optionally available
- In-line extendibility to other process tools such as coaters and developers
- Low power consumption
- Improved ease-of-use for all experience levels
... Read More | JEOL has more than 50 years of e-beam expertise. The JBX-3050MV series is an electron beam lithography system for mask/reticle fabrication that meets the design rule of 45 to 32 nm. This system features pattern writing with high speed, high accuracy and high reliability, achieved by high-end JEOL has more than 50 years of e-beam expertise. The JBX-3050MV series is an electron beam lithography system for mask/reticle fabrication that meets the design rule of 45 to 32 nm. This system features pattern writing with high speed, high accuracy and high reliability, achieved by high-end technology.
... Read More | JEOL has more than 50 years of e-beam expertise. Our latest generation of direct write tools, the JEOL JBX-8100FS series spot beam, vector scan, step-and-repeat lithography system is designed for higher throughput and lower operating costs.
The JBX-8100FS writes ultrafine patterns at a faster rate JEOL has more than 50 years of e-beam expertise. Our latest generation of direct write tools, the JEOL JBX-8100FS series spot beam, vector scan, step-and-repeat lithography system is designed for higher throughput and lower operating costs.
The JBX-8100FS writes ultrafine patterns at a faster rate of speed while minimizing idle time, especially during the exposure process, thus increasing throughput.
Key Features:
- Small footprint
- Low power consumption
- High throughput
- ZrO/W (Schottky) Emitter
- Stage positions measured and controlled in 0.6nm steps (0.15nm steps optional)
- Field size 100 μm × 100 μm (high resolution mode) and 1,000 μm × 1,000 μm (high throughput mode)
- Overlay accuracy ±9 nm or less (high resolution mode) and ±20 nm or less (high throughput mode)
- Sample size - wafers up to 200mm, masks up to 6-inch, micro samples of any size
... Read More |
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